Abstract
We experimentally showed ferromagnetism at above 300 K for ZnO nanowires prepared by reactive vapour deposition and subsequently implanted with 2 at% of Cu. The magnetic moments of the samples annealed in oxygen and in argon at 600 °C for 120 min are about 0.42 µB and 0.33 µB per Cu atom, respectively. No ferromagnetism-related secondary phase existed according to the results of x-ray diffraction, x-ray photoelectron spectroscopy and transmission electron microscopy including HRTEM and EELS mapping. It can be concluded that the d9 configuration in the ground state of Cu2+ plays an important role in ferromagnetism. This controllable and shallow doped ion implantation technique may find potential applications in spintronic, especially nano-spintronic, devices.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
