Abstract
CuO thin film was epitaxially grown on MgO (111) substrate by plasma-assisted molecular beam epitaxy method. Reflection high-energy electron diffraction monitoring and X-ray diffraction analysis indicates it is single crystal CuO (002) thin film. Without any detectable ferromagnetic dopant or second phase, the CuO thin film displays ferromagnetic characteristics at both 5K and 300K. With an in-plane mismatch and out of plane stretch, the existence of oxygen vacancies and the coexistence of Cu1+ and Cu2+ are inferred to be responsible for the origin of the room-temperature ferromagnetism in the CuO thin film.
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