Abstract
Highly oriented crystalline Ga2O3 thin films were fabricated at room temperature (RT) by excimer laser annealing. Amorphous Ga2O3 thin films were grown on α-Al2O3 (0001) substrates at RT by the pulsed laser deposition method using a focused KrF excimer laser and a sintered β-Ga2O3 target. Amorphous precursor films were irradiated by a non-focused KrF excimer laser (100–250mJ/cm2) at RT. The results of x-ray and reflection high-energy electron diffraction measurements indicated that highly (101)-oriented crystalline β-Ga2O3 thin films were obtained after RT laser annealing. The optical bandgaps of the crystalline thin films were approximately 4.7–4.9eV, as determined from the UV/Vis transmittance. The film surfaces after laser annealing revealed slight planar grain growth, indicating a high degree of crystallinity and showed the root mean square roughnesses of 0.28–0.48nm.
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