Abstract
Beam-based positron annihilation spectroscopy has been applied to the study of near-surface vacancies created by 2 keV B+ ions implanted into Cz Si. The use of a controllable-energy positron beam means that the probe can be tuned to maximize the response to the subsurface damage. Time-dependent changes have been observed in the near-surface vacancy concentration profile. For example, after one week at room temperature, exposure of an implanted sample to white light for 1 h resulted in the migration of ∼95% of the measurable damage to sinks—primarily, it is assumed, to the surface. The relative importance of temperature, air, and light has been investigated.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
