Abstract
High quality, gold-colored TiN was deposited at room temperature by decomposing TiCl4 in the downstream of an N2/H2 electron cyclotron resonance (ECR) plasma. The morphology of the as-deposited films was investigated by scanning electron microscopy, and the resistivity was measured using the four point probe technique. The films were uniform over 2 in. wafers, with resistivities of 100–150 μΩ cm. Auger electron spectroscopy was used for the determination of the Ti/N ratio and for the detection of contaminants, and shows that the as-deposited films were stoichiometric and chlorine free. The present results represent a major improvement in lowering the deposition temperature of TiN using ECR plasma-enhanced chemical vapor deposition with TiCl4 as reactant.
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