Abstract
Intense mid-infrared (λ∼2μm) room temperature electroluminescence from metal organic vapor phase epitaxy (MOVPE) grown type-I single AlSb∕InAsSb∕AlSb quantum wells (QWs) is reported. The spectral position of the electroluminescent peaks is in good agreement with k∙p envelope function calculation in the frame of four-band Kane’s model taking into account the intermixing of s and p states in the deep quantum well. A four times increase of the emission intensity with temperature increasing from 77to300K can be explained by highly efficient radiative recombination of the electrons injected into the narrow AlSb∕InAsSb∕AlSb QW due to its specific design, leading to Auger process suppression.
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