Abstract
Removal of ion-implantation-induced damage in InP is observed to a considerable extent by optical pumping using argon ion laser irradiation at room temperature. The damage takes the form of recombination, scattering, and compensation centers, which were generated by Be implantation with dose of 1010–1012/cm2. We find that minority carrier injection by optical pumping is an attractive alternative to technologies based on a thermal annealing approach for the removal of these centers.
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