Abstract
In this paper, we study argon ion damage in both GaAs and InP. Low temperature photoluminescence measurements of GaAs and InP multiple quantum well (MQW) heterostructures are compared before and after an argon ion bombardment of 500 eV. Computer simulations of the channeling depth and atomic displacement in both materials are also calculated using SCattering of Heavy, Low Energy Ions into CHannels (SCHLEICH). We demonstrate that the range of ion damage in the InP MQW structure appears to be greater than in the GaAs structure and the results from the computer simulations confirm and support these experimental findings.
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