Abstract
Hafnium oxide-aluminum oxide (HFAIO) dielectric films were cosputtered using HfO 2 and Al 2 O 3 targets, and their properties are studied in comparison with pure HfO 2 films. The X-ray diffraction studies confirmed that the HfO 2 films are nanocrystalline with a monoclinic phase. The as-deposited HfAIO films with a chemical composition of (HfO 2 ) 0 . 86 (AI 2 O 3 ) 0 . 14 are amorphous even after annealing at 500°C. Further, the cosputtered films show a slight reduction in leakage current. The leakage current density may be significantly reduced below 3 × 10 -10 A cm -2 at an electric field of 0.25 MV/cm when applying the proper radio-frequency bias to the substrate.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
