Abstract
InAsSb self-assembled quantum-dot (QD) distributed feedback (DFB) lasers based on (001) InP substrate have been grown by metalorganic vapor-phase epitaxy. A highly tensile-strained InGaAs was used as the barrier layer for InAsSb QDs. Single-mode emissions near 1.87μm have been demonstrated from narrow ridge waveguide DFB lasers in continuous-wave operation at temperatures up to 320K (47°C), with a characteristics temperature of 55K up to temperature of 310K.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
