Abstract
Room temperature continuous wave operation of CdZnSSe/ZnSSe quantum well laser diodes based on wide-gap II-VI semiconductors with lifetimes >3 h has been demonstrated. The density of stacking faults and threading dislocations present inside the laser diodes is /spl sim/5/spl times/10/sup 4//cm/sup 2/. Laser emission was observed at a wavelength of /spl sim/529 nm with a threshold current density of /spl sim/460 A/cm/sup 2/ and a threshold voltage of /spl sim/5 V in index-guided CdZnSSe/ZnSSe/MgZnSSe separate-confinement heterostructure laser diodes.
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