Abstract
Room-temperature continuous-wave (CW) operation of GaSb-based monolithic microcavity vertical-cavity surface-emitting lasers operating near 2.3 mum is presented. These devices were composed of two n-doped AlAsSb-GaSb Bragg mirrors, a type-I GaInAsSb-AlGaAsSb multiquantum-well active region, and an n++-InAsSb/p++-GaSb tunnel junction. CW laser operation was observed up to 294 K. A CW threshold current density as low as 1.1 kA ldr cm-2 was obtained at 284 K for 60-mum-diameter devices (20-mum-diameter emitting area).
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