661.7 nm room-temperature CW operation of AlGaInP double-heterostructure lasers with aluminium-containing quaternary active layer

Abstract

We report for the first time on room-temperature (25°C) continuous-wave (CW) operation of AlGaInP double-heterostructure lasers with an aluminium-containing quaternary active layer. The active layer is (Al0.1Ga0.9)0.5In0.5P. The lasing wavelength is 661.7 nm, which is the shortest ever reported for semiconductor lasers. The threshold current is 120 mA (6.7 kA/cm2).