Abstract

Scanning capacitance microscopy (SCM) is known to be a valuable tool for carrier mapping and profiling on nanoscale semiconductor samples. Certain applications, however, such as quantitative capacitance microscopy on InAs quantum dots, e.g. require low modulation frequencies and complete darkness, which are requirements completely incompatible with the current commercial SCM systems relying on a laser feedback system. For this reason, an intercepted feedback method was developed, which allows to switch off the laser temporarily while the feedback loop keeps running. As an application, images of sub surface InAs self assembled quantum dots were recorded. The InAs dots are clearly visible as bright areas in a contrast-rich capacitance landscape, which we attribute to local thickness variations of the InAs wetting layer in our sample.

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