Abstract
High-resistivity vanadium-doped CdTe and CdZnTe crystals were investigated by photoluminescence in the near-infrared spectral range. The observed shift of the near band edge luminescence with respect to the sample position along the ingot is explained in terms of a non-uniform distribution of zinc. Two deep luminescence bands were detected at around 0.8 eV and 1 eV. The electron - phonon interaction strengths (Huang - Rhys parameter S) of the two related centres have been estimated and a configuration coordinate diagrams proposed. The 0.8 eV emission band is assigned to the electrically active eV centre. The double peaked shape of the 0.8 eV emission band is a result of either an overlap between two emissions bands or the Jahn - Teller effect including a small quadratic effect. In the framework of the first hypothesis, the emission band is interpreted as a combination of two simultaneous recombination processes: the internal transition and the conduction band level transition.
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