Abstract
A set of Ti/Ni metallizations with different thickness of the underlying titanium layer was prepared on 6H-SiC together with structures that contained only pure Ti and Ni. Samples were gradually annealed at 750–1150 °C. Structures Ti(2)/Ni(50) and Ti(100)/Ni(50) showed the lowest contact resistivity, 2 × 10 −4 Ω cm 2 in both cases. For the Ti(2)/Ni(50) structure, low contact resistivity was reached most likely due to reduction of surface oxides on SiC by the thin titanium layer. In the Ti(100)/Ni(50) structure, the titanium layer prevents diffusion of nickel towards SiC and there is a layer containing mainly TiC at the interface with silicon carbide.
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