Abstract
We investigate the role of a TiN film on epitaxial growth and crystal quality in the void-assisted separation (VAS) method. Plan-view TEM images show the TiN film contains numerous nanometer-scale holes, resulting in a nano-net structure. X-ray rocking curve data show the crystal quality of GaN layers on the TiN nano-net is very high, having the tilt/twist angles of 60/90 arcsec. Numerous small GaN islands were generated on the TiN nano-net in the beginning of the growth. These islands having crystal facets may introduce the dislocation bending. We show that the TiN film plays a very important role in improving the crystal quality in the VAS method.
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