Abstract
We have investigated the role of the arsenic flux used during the substrate deoxidation process in the MBE (molecular beam epitaxy) growth of strained InAs/InP heterostructures. Two different experiments were performed: (i) thermal cleaning of the InP wafer under an As flux at different exposure times and (ii) the growth of very thin InAs layers (3–9 ML). The samples grown were characterized by Raman spectroscopy and selected area X-ray photoelectron spectroscopy. The results obtained demonstrated the formation of an InAs x P 1− x sublayer at the interface of the InAs/InP system. The annealing of InP under an As flux promotes not only As → P substitution on the surface, but also the subsequent diffusion of As atoms into the deeper subsurface region of InP.
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