Abstract
Hetero-interfaces between epitaxial LaAlO3 films and SrTiO3 substrates can exhibit an insulator-metal transition at a critical film thickness above which a quasi-two-dimensional electron gas forms. This work aims to elucidate the significant role the defects play in determining the sources of non-mobile and mobile carriers, the critical thickness, and the dipolar field screening. A model is built based on a comprehensive investigation of the origin of charge carriers and the advanced analysis of structural factors that affect the electronic properties of these hetero-epitaxial interfaces.
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