Abstract
The role of steps during the initial stages of GaAs growth on InAs surfaces was investigated by scanning tunneling microscopy (STM). The surface structures of a nominally (001) InAs substrate and a misoriented (001) InAs substrate tilted by 1° towards the [111]B direction were observed by STM after a certain amount of GaAs deposition. In the case of a nominally (001) surface, a growth mode transition from two-dimensional (2D) to 3D island growth occurred when more than 0.75 ML GaAs was deposited. On the other hand, in the case of a vicinal surface, a growth mode transition did not occur when the same amount of GaAs was deposited onto the surface. In this case, GaAs-selective growth attached to the step edges and crack formation extending in the [11̄0] direction were observed in the STM images. These results indicate that the initial growth stages of GaAs heteroepitaxy on an InAs vicinal surface are different from those on a nominally (001) InAs surface due to the existence of steps.
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