Abstract
Resistance-switching behaviors of the Pr0.7Ca0.3MnO3(PCMO) films based metalinsulator- metal (MIM) devices has been investigated. In this work, resistance change of PCMO films deposited with SRO buffer layers by using RF-magnetron sputtering system investigated at room temperature. The ratio of the resistance change of the PCMO films with SRO buffer layers in the high-resistance state to that in the low-resistance state turned out to be much lager than that of the PCMO films without SRO buffer layers. Moreover, The reproducible property of the fabricated samples were improved. Origin of resistance change is not clear, but PCMO films with SRO buffer layers have the possibility of application for nonvolatile memory device.
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