Abstract
Pr0.7Ca0.3MnO3 (PCMO) thin films were prepared on glass substrates by pulsed laser deposition and their resistive switching characteristics were investigated on a structure comprised of Ag/PCMO/Ag/glass. The PCMO films were grown with a (112) preferred orientation on Ag/glass substrates due to crystalline Ag layer. The crystalline PCMO films exhibited resistive switching characteristics by polarity change of bias voltage. The resistance ratio of high resistance state and low resistance state was enhanced by improvement of crystallinity of the PCMO film. The maximum resistance ratio obtained in this work was ∼4.2. Finally, the resistive switching of the PCMO films observed in this work is expected to make it possible to integrate the non-volatile memory devices on glass substrates.
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