Abstract
Transient behavior of metal-insulator-semiconductor tunnel diode (MISTD) with ultra-thin metal surrounded gate (UTMSG) is discussed in this work. The influence of an important parameter, S, which is the area proportion of surrounding gate to the total gate, on the transient read current and transient capacitance window is demonstrated. Transient current is found to be larger for larger S due to more significant edge late response. By taking advantage of the unusual capacitance-voltage characteristics, improved capacitance window could be achieved. The transient current window and capacitance window of UTMSG device with S = 0.66 have been found to be 17x and 14x larger compared with planar device.
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