Abstract
In this work, the transient current behavior of metal-insulator-semiconductor tunnel diode (MISTD) with oxide removal at the gate edge has been investigated. With an oxide-removed structure at the gate edge, the edge-removed (ER) MISTD not only exhibits reduced reverse bias current but also demonstrates enhanced transient current compared to conventional co-planar MISTD. These improved characteristics of ER MISTD can be attributed to the absence of oxide charges outside the gate edge and the insufficient supply of minority carriers. We also proposed a two-state transient current operation and tested the device’s endurance. Finally, we examined the relationship between oxide thickness and the current window and found that the current window is maximum when EOT is around 3.1 nm. Based on these properties, edge-removed MISTD shows potential as a dynamic transient memory device.
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