Abstract
The kinetics of phase separation and growth of Si precipitates during high-temperature annealing of nonstoichiometric SiOx films is theoretically studied. The mechanisms of silicon diffusion and capture by Si precipitates as well as oxygen emission and out diffusion from the Si precipitate interface toward the silicon oxide bulk are compared. The experimental kinetics of phase separation within 1s annealing SiOx films at 1000°C can be explained by the latter mechanism involving either neutral or negatively charged oxygen atoms. The maximum values of the activation energy of oxygen emission are estimated to match the simulation results to the experimental data.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.