Abstract
Numerous experiments have shown that the oxygen-free films of YH3 possess the face-centered cubic (fcc) structure only at high pressures whereas oxygen-containing YH3 films crystallize into the fcc lattice at ambient conditions. In this report, by means of first-principles simulations, we provide a detail understanding of the role of oxygen in stabilization of the fcc YH3 under normal pressure. We performed the oxygen position preferences screening within the fcc unit cell along with geometrical optimization series and verified the major stability conditions. The main aggregate and electronic characteristics have been calculated in order to gain an insight into how the Y–O bond activation and coordination in the metallic matrix create new materials properties. The possibility of the compositional architecture on the base of fcc crystalline silicon and oxygen-containing YH3 compounds has been suggested.
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