Abstract
We investigate the impact of different oxygen concentrations during boron diffusion at 950°C using borosilicate glass (BSG) layers deposited by atmospheric pressure chemical vapor deposition. Therefore, we vary the boron concentration in the BSG layer and the oxygen concentration in the gaseous ambient of the high-temperature step. Characterization includes sheet resistance as well as electrochemical capacitance voltage measurements for the determination of the resulting boron doping profile. In addition, we perform quasi steady-state photoconductance measurements to investigate the influence of the oxygen concentration on the recombination parameters of the boron-diffused surface. Low recombination current densities J 0 of J 0 = 38 fA/cm² at a sheet resistance of 54 Ω/sq are observed. Finally, we show that the oxygen concentration is a crucial parameter to prevent the formation of a boron-rich layer at the silicon surface.
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