Role of MoS2/GNR heterostructures in the performance engineering of ultra-violet (UV) photodetector

Abstract

The integration of graphene nanoribbons (GNR) with nanostructured chalcogenides like MoS2 is yielding remarkable results in the realm of opto-electronics. This collaboration enhances light-matter interactions and promotes efficient charge transfer pathways by modifying GNR's bandgap and defect levels. To exploit these advantages, we are synthesizing MoS2 and GNR heterostructures with varying ratios using a chemical route. Extensive characterizations involving XRD and SEM analysis are validating the successful creation of these heterostructures. Furthermore, we are assessing their optical properties through UV, PL, Raman, and FTIR analyses, with absorbance peaks and Raman modes being used to determine the number of MoS2 layers in each composition. Our primary focus is to develop a photodetector based on MoS2 and GNR heterostructures to enhance its performance. Fabricated through chemical process, the MoS2 and GNR heterostructures are being deposited between silver electrodes on a Si/SiO2 substrate. The resulting photodetector is expected to exhibit substantially improved photo-response and switching capabilities compared to individual nanomaterials. We anticipate that the optimized photodetection performance will feature remarkable attributes, including photo-responsivity of 18.81 mAW−1, detectivity of 46.5 × 107 jones, external quantum efficiency of 19.91, and swift response and recovery times. We expect these notable results, particularly for GNR: MoS2 ratios of 3:1 and 2:1 under 390 nm UV laser illumination, to underscore the immense practical potential of high-performance photodetectors.