Role of mask patterns in fabrication of Si nanotip arrays

Abstract

Different shapes of silicon (Si) nanotip arrays using reactive ion etching with various mask patterns were fabricated, and the surface profile, surface roughness and quantitative etch characteristics of the Si nanotip were characterised. It was found that the geometry as well as etch characteristics of Si nanotip arrays could be modified by changing the initial mask patterns. Pyramidal and conical shaped Si nanotips could be obtained from square and circular mask patterns, respectively. The alternate square array pattern resulted in a Si nanotip with a wavy array whereas the honeycomb mask pattern resulted in a Si nanotip in a hexagonal array. In terms of etch rate, the circular pattern mask showed faster etching than the square patterns. Also, the parallel pattern showed faster etching than the alternate pattern under the same conditions. The tip size and height of Si nanotip structures determined by atomic force microscopy measurement were in the range of 50–80 and 450–750 nm, respectively.