Abstract
Wide band gap semiconductor materials are extending significant applications in electronics and optoelectronics industry. They are showing continued advancement in ultraviolet to infrared LEDs and laser diodes. Likewise the band gap tunability of ZnS with intentional impurities such as Mg and Mn are found useful for optoelectronic devices. Information from literature indicates slight blue shift in the band gap energy of ZnS by Mg doping but nevertheless, we report a reasonable red shift (3.48 eV/356 nm to 2.58 eV/480 nm) in ZnS band gap energy in Mg-ZnS structure. Theoretical model based on first principle theory using local density approximation revealed consistent results on Mg-ZnS structure. Similarly, structural, morphological, optical and electrical properties of the as grown Mg-ZnS were studied by XRD, SEM, FTIR, EDS, UV-Vis Spectrophotometer and Hall measurement techniques.
Highlights
Band gap tunability is the process of controlling or changing the band gap of a material by controlling the composition of certain semiconductor alloys, such as GaAlAs, InGaAs, and InAlAs
Information from literature indicates slight blue shift in the band gap energy of ZnS by Mg doping but we report a reasonable red shift (3.48 eV/356 nm to 2.58 eV/480 nm) in ZnS band gap energy in Mg doped Zinc Sulfide (Mg-ZnS) structure
We report a phenomenon of red shift in ZnS by increasing Mg-dopant percentage in the material
Summary
Band gap tunability is the process of controlling or changing the band gap of a material by controlling the composition of certain semiconductor alloys, such as GaAlAs, InGaAs, and InAlAs. In the recent past, the blue-shift phenomenon is commonly seen in the reports, but the reports on red-shift phenomenon in ZnS structure are very few. A number of reports of ZnS doped by several metals (Mn, Co, Ni, Cu, Ag and Cd) correlate the blue shift in the band gap as quantum confinement of the nanoparticles.[4,5,6,7,8,9,10] due to the lack of information in the literature regarding the red-shift in band gap of ZnS, the understanding of the origin of the red-shift phenomenon in the material is not clear and more comprehensive studies are required in this regard.
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