Abstract
The role of lateral growth on the structural properties of high temperature (HT) GaN epitaxial layer has been investigated by means of transmission electron microscopy (TEM) and X-ray diffraction (XRD). Variations of the lateral growth rate of HT GaN in metal-organic chemical vapor deposition (MOCVD) can be obtained by changing the V/III ratio. It is found that under higher lateral growth rate, dislocation is easier to bend into subgrains away from c axis, and the position where bend occurs is closer to the buffer layer, however, dislocation density does not show to monotonically vary with increasing lateral growth rate. A model concerning the GaN growth dynamics and dislocation bending mechanics has been proposed to explain the correlation between lateral growth and the structural properties of GaN.
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