Abstract
We report on the first calculation of transport in InAs/GaSb/AlSb-based interband tunnel structures which uses a realistic band structure model. The results are compared with calculations using a two-band model which includes only the lowest conduction band and the light-hole band. It is found that heavy-hole states can introduce substantial hole-mixing effects in device structures containing GaSb quantum wells, and should have a significant influence on current-voltage characteristics interband devices.
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