Abstract

A model has been developed that incorporates realistic band structure calculations to describe carrier transport in interband tunnel structures based on the InAs/GaSb/AlSb material system. The light-hole, heavy-hole, and split-off valence bands, and the lowest conduction band, have been incorporated using the effective bond orbital model. The results of the present calculations are compared with those obtained using a two-band model in which only the lowest conduction band and the light-hole valence band have been included. It is found that heavy-hole states can introduce substantial hole-mixing effects in device structures containing GaSb valence-band quantum wells, and could have a significant influence on the current-voltage characteristics of interband devices. >

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