Abstract
AbstractThe role of the electron—phonon scattering and the peripheral phonons are studied by calculating the lattice thermal conductivity of phosphorous doped Ge in the temperature range 1 to 5 K. The temperature and the carrier concentration dependences of the reduced Fermi potential (η*) and of the density of states effective mass (m*) of electrons are also studied at low temperatures. The entire study is made using the Ziman expression of the electron—phonon scattering relaxation rate and the Callaway integral of the lattice thermal conductivity. The contribution of the peripheral phonons in the total phonon conductivity of the P‐doped Ge is also studied. A good agreement is found between the calculated and experimental value of the phonon conductivity for five different samples of P‐doped Ge having different carrier concentrations of 1.2 × 1017 to 1.1 × × 1018 cm−3 in the entire temperature range 1 to 5 K. The analytical expressions are also obtained for the phonon conductivity of the doped semiconductor in the low temperature approximation.
Published Version
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