Role of dielectric screening in Auger recombination in semiconductors

Abstract

Effective interaction which causes Auger recombination is discussed on the basis of the Green's-function formalism. It is found that in many cases the conventional treatment of dielectric screening can be used for the exchange term as well as the Coulomb term for the relevant matrix elements. This is in contrast to the proposal made by Haug and Ekardt that the exchange term should not be screened. Confirmation is made through comparison of the theory and experiments of the Auger coefficients in $n$-InAs, $p$-GaSb, $p$-Ge, and $p$-Si.