Abstract
The effect of annealing on the structural and the magnetic properties of GaN implanted with Gd is investigated. The wavelength dependence of the photoconductivity of Gd:GaN layers doped in situ is also studied. These results show that Gd incorporation produces defects not only in implanted samples, but also in Gd:GaN layers doped in situ. A clear correlation between the saturation magnetization and the defect density is observed in implanted samples. A model has been proposed to explain the effects of colossal magnetic moment per Gd ion and associated ferromagnetism observed in this system in terms of the formation of giant defect cluster around each Gd ion.
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