Abstract
We investigated the feasibility of obtaining large photoresponse in metal-semiconductor-metal (MSM)type single nanowire device where one contact can be blocking type. We showed that suitable modification of the blocking contact by deposition of a capping metal using focused electron beam (FEB) can lead to considerable enhancement of the photoresponse. The work was done in a single Cu:TCNQ nanowire device fabricated by direct growth of nanowires (NW) from pre-patterned Cu electrode which makes the contact ohmic with the other contact made from Au. Analysis of the data shows that the large photoresponse of the devices arises predominantly due to reduction of the barriers at the Au/NW blocking contact on illumination. This is caused by the diffusion of the photo generated carriers from the nanowires to the contact region. When the barrier height is further reduced by treating the contact with FEB deposited Pt, this results in a large enhancement in the device photoresponse.
Highlights
Nanotubes, nanowires and nanobelts are important one-dimensional (1D) nanomaterials that are the foundation for nanoscience and nanotechnology [1,2,3,4,5,6,7,8,9,10,11,12,13,14]
In this paper we investigate the role of contact in photo response where the contact barrier can be modified after the device is fabricated using focused ion beam (FIB) or focused electron beam (FEB) deposited metal
The I-V data is analyzed in the frame work of MSM configuration where the Cu and the Au electrodes connecting the nanowire act as the metal (M) electrodes and Cu:TCNQ nanowire is the semiconductor
Summary
Nanowires and nanobelts are important one-dimensional (1D) nanomaterials that are the foundation for nanoscience and nanotechnology [1,2,3,4,5,6,7,8,9,10,11,12,13,14]. It is expected that in nanowire devices that show large photoresponse, the contact will play an important role and its suitable modification can lead to enhancement of the photo-response.
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