Combining Nanofocused X-Rays with Electrical Measurements at the NanoMAX Beamline

Lert Chayanun,Hanna Dierks,Alexander Björling,Jesper Wallentin,Susanna Hammarberg,Magnus T Borgström,Gaute Otnes

doi:10.3390/cryst9080432

Lert Chayanun, Hanna Dierks + Show 5 more

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https://doi.org/10.3390/cryst9080432

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Journal: Crystals	Publication Date: Aug 20, 2019
Citations: 13	License type: CC BY 4.0

Affiliation: Lund University, MAX IV Laboratory

Abstract

The advent of nanofocused X-ray beams has allowed the study of single nanocrystals and complete nanoscale devices in a nondestructive manner, using techniques such as scanning transmission X-ray microscopy (STXM), X-ray fluorescence (XRF) and X-ray diffraction (XRD). Further insight into semiconductor devices can be achieved by combining these techniques with simultaneous electrical measurements. Here, we present a system for electrical biasing and current measurement of single nanostructure devices, which has been developed for the NanoMAX beamline at the fourth-generation synchrotron, MAX IV, Sweden. The system was tested on single InP nanowire devices. The mechanical stability was sufficient to collect scanning XRD and XRF maps with a 50 nm diameter focus. The dark noise of the current measurement system was about 3 fA, which allowed fly scan measurements of X-ray beam induced current (XBIC) in single nanowire devices.

Highlights

IntroductionX-ray optics can provide nanofocusing at the range of tens of nanometers [2,3]
X-rays have a long penetration depth compared with electron and optical beams [1], and modernX-ray optics can provide nanofocusing at the range of tens of nanometers [2,3]
The excitation process is similar to that achieved using visible light and electron beams, and X-ray beam induced current (XBIC) is similar to scanning photocurrent microscopy (SPCM) [12] and electron beam induced current (EBIC) [13]

Summary

Introduction

X-ray optics can provide nanofocusing at the range of tens of nanometers [2,3] This development has made it possible to investigate complete single semiconductor nanostructures [4,5,6,7,8,9,10,11]. By combining the nanofocused X-ray probe with an applied electrical bias as well as electrical current detection, nanodevices can be investigated in more or less realistic operational conditions. In such investigations, the X-rays can be used as a pump, that is, as excitation source with the electrical measurements as a probe, or vice versa. XBIC could help developing the next-generation nanometer scale electronic devices

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