Role of Carrier Transport in Source and Drain Electrodes of High-Mobility MOSFETs

Abstract

<para xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> We have studied the performance potentials of III–V semiconductors and Ge n-channel MOSFETs based on a quantum-corrected Monte Carlo device simulation. We found that as a ballistic limit is approached, III–V MOSFETs lose their inherent advantage over Si and Ge MOSFETs because current enhancement due to ballistic transport becomes less effective than in Si and Ge channels. However, a high source and drain doping concentration was found to greatly improve the performance of III–V MOSFETs by reducing parasitic resistance and the mitigation of “source starvation” attributed to the low density of states. </para>