Abstract
Present work studies the profiles of a few nonlinear optical (NLO) properties of doped GaAs quantum dot (QD) with special stress on the role played by carrier density under the governance of noise. Noise employed here is a Gaussian white noise and it has been added to the system via two different approaches; additive and multiplicative. Variation of carrier density particularly affects the peak height of the NLO properties. Introduction of noise brings about some remarkable changes in the profiles of NLO properties over the entire range of variation of carrier density. These changes, however, depend on the pathway by which noise has been applied and also on the noise strength. The interplay between carrier density and noise gives rise to some interesting observations that possess relevance in the related field of research.
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