Abstract
Present work explores the profiles of a few nonlinear optical (NLO) properties of doped GaAs quantum dot (QD) with special emphasis on the role played by the carrier density under the aegis of noise. Noise term maintains a Gaussian white character and it has been introduced to the system via two different pathways; additive and multiplicative. A change of carrier density principally affects the peak height of the NLO properties. Incorporation of noise leads to some remarkable changes in the profiles of NLO properties during the variation of carrier density. These changes, however, depend on the pathway by which noise has been applied and also on the noise strength. The interplay between carrier density and noise produces some interesting outcomes that bear relevance in the related field of research.
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