Role of beryllium doping in strain changes in II-type InAs/GaSb superlattice investigated by high resolution X-ray diffraction method

Abstract

We have studied the influence of the beryllium doping on strain in the II-type InAs/GaSb superlattices (SLs) by means of high-resolution X-ray diffraction (HRXRD). Three analyzed superlattices were grown by molecular beam epitaxy. One of the examined superlattices was undoped. Two others structures, called doped SLs, composed of two superlattices: Be-doped and undoped which were grown one on the top of each other. The doping concentration was determined by secondary ion mass spectroscopy. The doping level was 1×1017 cm−3 and 2×1019 cm−3. For doped superlattices, the HRXRD measurements showed splitting of satellite (ST) peaks. Furthermore, the separation of ST peaks increase with doping level. In contrast, for undoped superlattice, the splitting of the ST peaks was not observed. Sometimes the separation of ST peaks can be caused by change of thickness period of superlattice or partial relaxation of the structure. However, we claim that in our experiment the splitting is caused by another mechanism: The presence of Be atoms in SL causes the change of average lattice constant of the superlattice. The influence of Be dopant on lattice parameter of superlattice was confirmed by theoretical simulations. Furthermore, the change of the lattice constant (Δa/a) of the GaSb:Be buffer was examined. The reduction of lattice parameter of GaSb was noticed. It was caused by the presence of Be doping and unintentionally incorporated As-atoms in the GaSb layer. It is very important to know that even very small Be concentration (1×1017 cm−3) causes the change of average lattice parameter of SL.