Abstract
Photoluminescence of Si NCs with the size (10–300nm) bigger than the exciton Bohr radius in the bulk Si crystals (4.8nm) has been considered. Photoluminescence in such NC systems is analyzed from the point of view of new concept based on the effect of hot carrier ballistic transport in excitation of suboxide defect-related photoluminescence at the Si/SiOx interface. The dependence of the 1.70eV PL band integrated intensity on Si NC sizes was numerically calculated on the base of the hot carrier ballistic PL model. The well correlation between calculated and experimental results has been obtained for Si NCs with the size from the 30–150nm range.
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