Abstract
Monolayer molybdenum disulfide (MoS2) is considered a promising candidate for high-performance flexible nanoelectronics in the future. The robustness of conductivity against bending is critical for the stability of flexible electronic devices. We proposed an all-MoS2 nanoribbon-based junction consisting of a 2H semiconducting phase MoS2 nanoribbon sandwiched between two 1 T metallic phase MoS2 electrodes. The junction exhibits better conducting behavior due to the contribution of the nanoribbon’s edge states and is insensitive to the bending angle of the semiconducting region when the bending angle is close up to 30°. These results suggest that this system is very promising for flexible nanoelectronics.
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