Robustness evaluation of electrical characteristics of sub-22 nm FinFETs affected by physical variability

Abstract

The physical parameters of digital devices have been affected by process variability The paper is focused on subthreshold performance characterization of FET with Visual TCAD (Exploratory Data Analysis) tools considering the FinFET technology. So evaluating the impact of electrical characteristics in the physical variability process with the designers and Visual TCAD tools is a most crucial one. In this paper robustness evaluation of sub-22 nm FinFETs electrical characteristics affected by the physical variability process is proposed. The behaviour of a predictive data for FinFET technology, particularly for a NFET and PFET from a 20 nm technology to 7 nm technology are provided within the ON and OFF currents under the consideration of process variability effects. For a set of FinFET predictive technologies, effects of variations in process parameters on the currents of ION and IOFF are evaluated in this paper. These evaluations are help in understanding of variability sources that impact on FinFET devices and identifying of significant behavior standards with respect to the use of FinFET devices in digital designs. The results highlight that the IOFF currents are more affected by the impact of geometrical parameters on the FinFET devices than the ION currents.