Robust write operation in Co slotted nanoring

Abstract

In magnetic random access memory (MRAM), free layers are used to store data bits as “0” or “1” in binary system. The main bottleneck limiting the practical applications of current MRAM technology is its storage states’ transition probability. Although several generations of MRAM have been reported, the problem still puzzles us. Here, we utilize an external field to switch Co slotted nanoring, which is convenient to reveal the key factor in the control of magnetic moments’ flip. Based on such analysis, we present a robust write operation through setting the slot edge parallel to the external field. In comparison with the probabilistic storage states’ transition in previous MRAM, our new technology definitely increases the switching probability to 100%. The continuous and orderly data-input process results in an energy barrier to protect the storage state. In addition, the robust write operation can also significantly reduce the influence of the device’s dimension on the switching probability, which is vital in decreasing the complexity and difficulty of the manufacture process. Besides, the novel data-input method could afford linearly tunable write parameters to satisfy the different application scenarios of storage devices.