Robust power grid network design considering EM aging effects for multi-segment wires

Abstract

This paper presents a number of power grid network design and optimization techniques that consider the electromigration (EM) effects for multi-segment interconnect wires. First, we consider a new EM immortality constraint due to EM void saturation volume for multi-segment interconnects. It helps reduce conservativeness in the EM-aware on-chip power grid design. Along with the EM nucleation phase immortality constraint, we show that both EM immortality constraints can be naturally integrated into the existing programming based power grid optimization framework. Second, to mitigate the overly conservativeness of the immortality constrained optimization methods, we further explore three strategies: we first size up failed wires to meet one of the immortality conditions subject to the design rules; second, we consider the EM-induced aging effects on power supply networks for a target lifetime, which allows some short-lived wires to fail and optimizes the remaining wires; third, we propose a large change sensitivity-based optimization scheme to perform localized fixing based on recently proposed coupled EM-IR drop analysis method. Numerical results on a number of IBM-format power grid networks demonstrate that the new method can reduce more power grid area compared to the existing EM immortality constrained optimizations. Moreover, the new method is able to optimize power grids with nucleated wires, which would not be possible with the existing methods. Results also show the sensitivity-based localized power girds fixing can fix EM-induced IR drop violations in a few minutes for synthesized power grid networks from ARM core designs.