Robust memory cell cylinder capacitor with cross double patterning technology

Abstract

Robust memory cell cylinder capacitor with cross double patterning technology (cross DPT) was successfully developed for the first time. Cross DPT was introduced to overcome overlay problems of conventional DPT. During second patterning reticle is rotated by 90° therefore pattern to pattern overlay in cross DPT is not as critical as in conventional DPT. Memory cell cylinder capacitor with cross DPT showed more rectangular shape without any physical failure and capacitance of cell capacitor with cross DPT is improved up to ∼8% compared to capacitance of cell capacitor with single exposure technique (SET).