Abstract
Optically addressable solid-state color center spin qubits have become important platforms for quantum information processing, quantum networks and quantum sensing. The readout of color center spin states with optically detected magnetic resonance (ODMR) technology is traditionally based on Stokes excitation, where the energy of the exciting laser is higher than that of the emission photons. Here, we investigate an unconventional approach using anti-Stokes excitation to detect the ODMR signal of silicon vacancy defect spin in silicon carbide, where the exciting laser has lower energy than the emitted photons. Laser power, microwave power and temperature dependence of the anti-Stokes excited ODMR are systematically studied, in which the behavior of ODMR contrast and linewidth is shown to be similar to that of Stokes excitation. However, the ODMR contrast is several times that of the Stokes excitation. Coherent control of silicon vacancy spin under anti-Stokes excitation is then realized at room temperature. The spin coherence properties are the same as those of Stokes excitation, but with a signal contrast that is around three times greater. To illustrate the enhanced spin readout contrast under anti-Stokes excitation, we also provide a theoretical model. The experiments demonstrate that the current anti-Stokes excitation ODMR approach has promising applications in quantum information processing and quantum sensing.
Highlights
Addressable solid-state color center spin qubits have become important platforms for quantum information processing, quantum networks and quantum sensing
In 4H-silicon carbide (SiC), two forms of VSi defects exist due to discrepancies in the silicon vacancy lattice: V1 and V2 centers have corresponding zero phonon lines (ZPLs) of 861 and 915 nm, respectively
Since the spin of the V2 center can be manipulated at room temperature, we focus only on the V2 center of the VSi defect, which features a S = 3/2 spin quartet and 70 MHz ground state zero field splitting (ZFS)
Summary
Addressable solid-state color center spin qubits have become important platforms for quantum information processing, quantum networks and quantum sensing. The readout of color center spin states with optically detected magnetic resonance (ODMR) technology is traditionally based on Stokes excitation, where the energy of the exciting laser is higher than that of the emission photons. The mechanisms of AS excitation have been clarified, such as multiphoton absorption, phonon absorption, and Auger recombination[20,21] Most recently, it has been observed in the color centers of diamond and defects in hexagonal boron nitride (hBN)[20,21]. It has been observed in the color centers of diamond and defects in hexagonal boron nitride (hBN)[20,21] These were shown to be helpful in alloptical temperature sensing and manipulating emissions of quantum emitters[20,21]. The realization of spin readout with AS excitation would broaden the boundary of quantum technologies based on solid-state spin qubits
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