Abstract
A novel waffle-type nLDMOS-SCR ESD clamp with compact source and drain for high-voltage ESD protection is proposed and realised using the 0.35 µm, 30/5 V bipolar-CMOS-DMOS (BCD) process. With this new structure, a high ESD failure current of 4.4 A was achieved with a total channel width of only 60 µm. Considering the area efficiency, the waffle-type structure provides more than 30% higher current handling capability than the conventional ones. Because of its better robustness and area efficiency, the waffle-type structure should be a promising layout for high-voltage ESD protection applications.
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